Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.

Bibliographic Details
Main Author: Zhang, Hengfang.
Format: eBook
Language:English
Published: Linköping : Linkopings Universitet, 2022.
Edition:1st ed.
Series:Linköping Studies in Science and Technology. Dissertations Series
Subjects:
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