Table of Contents: Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.

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Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.

Bibliographic Details
Main Author:	Zhang, Hengfang.
Format:	eBook
Language:	English
Published:	Linköping : Linkopings Universitet, 2022.
Edition:	1st ed.
Series:	Linköping Studies in Science and Technology. Dissertations Series
Subjects:	Electronic books.
Online Access:	Click to View

Table of Contents:

Intro
ABSTRACT
POPULÄRVETENSKAPLIG SAMMANFATTNING
PREFACE
ACKNOWLEDGEMENT
Contents
Part I
1.1 Introduction
1.2 Fundamental properties of group-III nitrides
1.3 MOCVD
1.4 Epitaxy of N-polar III-Nitrides
1.5 Characterization techniques
1.6 Summary of main results
Part II
2.1 Publications included in the thesis
2.2 Publications not included in the thesis.