APA Citation

Zhang, H. (2022). Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures. Linköping: Linkopings Universitet.

Chicago Style Citation

Zhang, Hengfang. Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures. Linköping: Linkopings Universitet, 2022.

MLA Citation

Zhang, Hengfang. Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures. Linköping: Linkopings Universitet, 2022.

Warning: These citations may not always be 100% accurate.