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01339nam a2200349 a 4500 |
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EBC3320073 |
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MiAaPQ |
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20200520144314.0 |
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m o d | |
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130822s2012 gw ad sbm 000 0 eng d |
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|z 9783862193646
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|z 9783862193653 (e-book)
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|a (MiAaPQ)EBC3320073
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|a (Au-PeEL)EBL3320073
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|a (CaPaEBR)ebr10745533
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|a (OCoLC)859157541
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|a TK7871.95
|b .F56 2012
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|a Flores, Jaime Alberto Zamudio.
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|a Device characterization and modeling of large-size GaN HEMTs
|h [electronic resource] /
|c Jaime Alberto Zamudio Flores.
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| 260 |
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|a Kassel :
|b Kassel University Press,
|c 2012.
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| 300 |
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|a xxxiii, 221 p. :
|b ill.
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| 502 |
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|a Dissertation--Kassel Univ., 2012.
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| 504 |
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|a Includes bibliographical references.
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| 533 |
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|a Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
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| 650 |
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|a Modulation-doped field-effect transistors.
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| 650 |
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|a Gallium nitride.
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| 650 |
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|a Wide gap semiconductors.
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| 655 |
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4 |
|a Electronic books.
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| 710 |
2 |
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|a ProQuest (Firm)
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| 856 |
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|u https://ebookcentral.proquest.com/lib/matrademy/detail.action?docID=3320073
|z Click to View
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