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|a Papamichail, Alexis.
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|a Hot-Wall MOCVD for Advanced GaN HEMT Structures and Improved P-type Doping.
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|a 1st ed.
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|a Linköping :
|b Linkopings Universitet,
|c 2023.
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|c {copy}2023.
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|a 1 online resource (96 pages)
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|a text
|b txt
|2 rdacontent
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|a computer
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|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Linköping Studies in Science and Technology. Dissertations Series ;
|v v.2333
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|a Intro -- ABSTRACT -- POPULÄRVETENSKAPLIG SAMMANFATTNING -- PREFACE -- ACKNOWLEDGEMENT -- Contents -- Part I -- 1.1 Introduction -- 1.2 Properties of group-III nitride semiconductors -- 1.3 MOCVD growth of Mg-doped GaN and AlGaN/GaN HEMTs -- 1.4 Characterization techniques -- 1.5 Summary of main results -- 1.6 Outlook -- References -- List of abbreviations -- Part II -- 2.1 Publications included in the thesis -- 2.2 Publications not included in the thesis -- Papers.
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|a Description based on publisher supplied metadata and other sources.
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|a Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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|a Electronic books.
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|i Print version:
|a Papamichail, Alexis
|t Hot-Wall MOCVD for Advanced GaN HEMT Structures and Improved P-type Doping
|d Linköping : Linkopings Universitet,c2023
|z 9789180752794
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|a ProQuest (Firm)
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| 830 |
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|a Linköping Studies in Science and Technology. Dissertations Series
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| 856 |
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|u https://ebookcentral.proquest.com/lib/matrademy/detail.action?docID=30733597
|z Click to View
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