Hot-Wall MOCVD for Advanced GaN HEMT Structures and Improved P-type Doping.
| Main Author: | |
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| Format: | eBook |
| Language: | English |
| Published: |
Linköping :
Linkopings Universitet,
2023.
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| Edition: | 1st ed. |
| Series: | Linköping Studies in Science and Technology. Dissertations Series
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| Subjects: | |
| Online Access: | Click to View |
Table of Contents:
- Intro
- ABSTRACT
- POPULÄRVETENSKAPLIG SAMMANFATTNING
- PREFACE
- ACKNOWLEDGEMENT
- Contents
- Part I
- 1.1 Introduction
- 1.2 Properties of group-III nitride semiconductors
- 1.3 MOCVD growth of Mg-doped GaN and AlGaN/GaN HEMTs
- 1.4 Characterization techniques
- 1.5 Summary of main results
- 1.6 Outlook
- References
- List of abbreviations
- Part II
- 2.1 Publications included in the thesis
- 2.2 Publications not included in the thesis
- Papers.