Table of Contents: P-Type and Polarization Doping of GaN in Hot-wall MOCVD.

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P-Type and Polarization Doping of GaN in Hot-wall MOCVD.

Bibliographic Details
Main Author:	Papamichail, Alexis.
Format:	eBook
Language:	English
Published:	Linköping : Linkopings Universitet, 2022.
Edition:	1st ed.
Series:	Linköping Studies in Science and Technology. Licentiate Thesis Series
Subjects:	Electronic books.
Online Access:	Click to View

Table of Contents:

Intro
ABSTRACT
POPULÄRVETENSKAPLIG SAMMANFATTNING
PREFACE
ACKNOWLEDGEMENT
Contents
Part I
1.1 Introduction
1.2 Properties of group-III nitride semiconductors
1.3 MOCVD growth of Mg-doped GaN and AlGaN/GaN HEMTs
1.4 Characterization techniques
1.5 Summary of main results
References
List of abbreviations
Part II
2.1 Publications included in the thesis
2.2 Publications not included in the thesis
Papers.