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|a ul Hassan, Jawad.
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|a Epitaxial Growth and Characterization of SiC for High Power Devices.
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| 250 |
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|a 1st ed.
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| 264 |
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|a Linköping :
|b Linkopings Universitet,
|c 2009.
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| 264 |
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|c {copy}2009.
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| 300 |
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|a 1 online resource (93 pages)
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| 336 |
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|a text
|b txt
|2 rdacontent
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|a computer
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|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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| 490 |
1 |
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|a Linköping Studies in Science and Technology. Dissertations Series ;
|v v.1243
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| 588 |
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|a Description based on publisher supplied metadata and other sources.
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| 590 |
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|a Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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| 655 |
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4 |
|a Electronic books.
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| 776 |
0 |
8 |
|i Print version:
|a ul Hassan, Jawad
|t Epitaxial Growth and Characterization of SiC for High Power Devices
|d Linköping : Linkopings Universitet,c2009
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| 797 |
2 |
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|a ProQuest (Firm)
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| 830 |
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0 |
|a Linköping Studies in Science and Technology. Dissertations Series
|
| 856 |
4 |
0 |
|u https://ebookcentral.proquest.com/lib/matrademy/detail.action?docID=30401635
|z Click to View
|
